SINGULUS TECHNOLOGIES employs inductively coupled plasma (ICP) and capacitively coupled (CCP) sources for inline PECVD coating applications. ICP is a method that offers a high electron and activation density in conjunction with low ion energy, which allows very high deposition rates over a large width and extraordinary layer quality with wide process windows at low substrate damage. Therefore, ICP plasma sources are ideally suitable for high-rate and low-damage mass production of electronic devices like solar cells. CCP is an ideal method for depositing of thin or thick conductive layers, highly doped as needed in the PV cell technology. SINGULUS TECHNOLOGIES has developed new, large-scale linear plasma sources based on ICP and CCP technology. Both technologies are used for processes developed using state-of- the-art PECVD lab equipment at SINGULUS TECHNOLOGIES R&D center.